2SK2957S Silicon N Channel MOS FET

2SK2957S Silicon N Channel MOS FET

2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK295.

Features

• Low on-resistance R DS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150
  –55 to +150 Unit V V A A A W °C .