2SK2940L Silicon N Channel MOS FET

2SK2940L Silicon N Channel MOS FET

2SK2940(L),2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3.

Features

• Low on-resistance R DS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2940(L),2SK2940(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 45 180 45 45 173 75 150
  –55 to +150 Uni.