2SK2925 Datasheet

2SK2925 Silicon N-Channel MOSFET

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain.

Features

• Low on-resistance R DS =0.060 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline DPAK
  –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150
  –55 to +150 Un.