Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions 0.4 0.2 Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end prod.
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Package Dimensions
0.4 0.2
Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
[2SK2864]
8.2 7.8 6.2 3
8.4 10.0
0.6
4.2
1.2
1.0 2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
2.5
0.7
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temper.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SK2862 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK2865 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2866 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK2869 |
Hitachi Semiconductor |
N-Channel MOSFET | |
5 | 2SK2869 |
Renesas Technology |
Silicon N Channel MOS FET | |
6 | 2SK2869 |
Kexin |
N-Channel Silicon MOSFET | |
7 | 2SK2869L |
Renesas Technology |
Silicon N Channel MOS FET | |
8 | 2SK2869S |
Renesas Technology |
Silicon N Channel MOS FET | |
9 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
10 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
11 | 2SK2803 |
Sanken electric |
MOSFET | |
12 | 2SK2803 |
INCHANGE |
N-Channel MOSFET | |
13 | 2SK2804 |
Sanken electric |
MOSFET | |
14 | 2SK2805 |
Sanken electric |
MOSFET | |
15 | 2SK2806 |
Fuji Electric |
N-channel MOS-FET |