2SK2476 |
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| Part Number | 2SK2476 |
| Manufacturer | NEC |
| Description | The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on) = 5.0 Ω (VGS = 10 V, I... |
| Features |
• Low On-Resistance RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 800 ± 30 ± 3.0 ± 9.0 40 2.0 150 3.0 37.8 V V A A W W ˚C A mJ 1 2 3 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.5... |
| Datasheet |
 2SK2476 Data Sheet
PDF 117.09KB |
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