2SK211 Datasheet

2SK211 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) • High forward transfer admitance: |Yfs| = 9 mS (typ.) • Extremely low reverse transfer capacitance: Cr.

Features

ok (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking JEDEC ― JEITA SC-59 TOSHIBA 2-3F1C Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test Condition IGSS VGS = −0.5 V, VDS = 0 V V (BR) GDO IG = −100 μA IDSS (Note) VGS = 0 V, VDS = 10 V VGS (OF.