2SK2099-01L |
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| Part Number | 2SK2099-01L |
| Manufacturer | Fuji Electric |
| Description | 2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 0,85... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
0,85Ω
6A
20W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V... |
| Document |
 2SK2099-01L Data Sheet
PDF 215.41KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fuji Electric |
N-channel MOS-FET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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UTC |
SILICON N-CHANNEL TRANSISTOR |
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NEC |
N-Channel MOS FET |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Rohm |
Small switching Transistors |
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Rohm |
Small switching Transistors |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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