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2SK2082-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 1,4Ω 9A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 1,4Ω 9A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V.
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Toshiba Semiconductor |
Silicon N Channel Junction Type Field Effect Transistor |
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INCHANGE |
N-Channel MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
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Fuji Electric |
N-channel MOS-FET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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Toshiba |
N-Channel MOSFET |
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Fuji Electric |
Power MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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