2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V G.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | 2SK2022-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK2020-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2020-01MR |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2020-01MR |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2021-01 |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2021-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK2023-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2023-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK2024-01 |
Fuji Electric |
Power MOSFET | |
10 | 2SK2024-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK2025-01 |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2025-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
13 | 2SK2026-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
14 | 2SK2026-01 |
Fuji |
N-Channel Silicon Power MOSFET | |
15 | 2SK2027-01 |
Fuji Electric |
N-channel MOS-FET |