2SK2018-01S Fuji Electric N-channel MOS-FET Datasheet. Stock, Price

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2SK2018-01S

Fuji Electric
2SK2018-01S
2SK2018-01S 2SK2018-01S
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Part Number 2SK2018-01S
Manufacturer Fuji Electric
Description 2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > ...
Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Ra...

Document Datasheet 2SK2018-01S Data Sheet
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