2SK2018-01S |
|
Part Number | 2SK2018-01S |
Manufacturer | Fuji Electric |
Description | 2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > ... |
Features |
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof
N-channel MOS-FET
60V
0,1Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Ra... |
Document |
2SK2018-01S Data Sheet
PDF 214.85KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
Fuji Electric |
N-channel MOS-FET |
|
|
|
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
|
|
Sanyo Semicon Device |
N-Channel MOSFET |
|
|
|
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
|
|
Panasonic |
Silicon N-Channel MOSFET |
|
|
|
Panasonic |
Silicon N-Channel Power F-MOS |
|
|
|
Fuji Electric |
N-channel MOS-FET |
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|