2SK1969-01 |
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| Part Number | 2SK1969-01 |
| Manufacturer | Fuji Electric |
| Description | 2SK1969-01 FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET... |
| Features |
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,017Ω 50A
125W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC Converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I ... |
| Datasheet |
 2SK1969-01 Data Sheet
PDF 209.85KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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INCHANGE |
N-Channel MOSFET |
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NEC |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Micro Electronics |
N-CHANNEL SILICON FET |
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ETC |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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