2SK1948 |
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| Part Number | 2SK1948 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1948 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching reg... |
| Features |
• • • • • Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1948 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 50 200 50 200 150 –55 to +... |
| Document |
 2SK1948 Data Sheet
PDF 48.66KB |
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