Ordering number:EN3821 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1726] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Ab.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK1726
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK1726]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm)
El.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SK1723 |
INCHANGE |
N-Channel MOSFET Transistor | |
2 | 2SK1724 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1725 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK1727 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK1728 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1729 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK170 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK1700 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1701 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK1703 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1704 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1705 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
13 | 2SK1706 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
14 | 2SK1707 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
15 | 2SK1708 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |