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2SK1157 |
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| Part Number | 2SK1157 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDS... |
| Document |
 2SK1157 Data Sheet
PDF 49.30KB |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET |
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