2SK1098-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 150V 0,5Ω 6A 30W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings an.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 150V 0,5Ω 6A 30W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 6 24 .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SK1093 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1094 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1095 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1095 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK1096-MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |