2SK0301 |
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| Part Number | 2SK0301 |
| Manufacturer | Panasonic Semiconductor |
| Description | Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.0±0.2 5.1±0.2 4.0±0.2 unit: mm I Features 13.5±0.5 G Low noies... |
| Features |
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1 +0.2 0.45 –0.1 +0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 250 125 −55 to +125 Unit V V V mA mA mW °C °C 1.27 1.27 1 2 3 2.54±0.15 I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate ... |
| Datasheet |
 2SK0301 Data Sheet
PDF 74.18KB |
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Panasonic Semiconductor |
Silicon N-Channel Junction FET |
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Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel Junction FET |
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