2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S.
.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure.
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No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
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Sanyo |
Ultrahigh Speed Switching Applications |
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Sanyo |
P-Channel Silicon MOSFET |
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NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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Kexin |
MOSFET |
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NEC |
P-Channel Power MOSFET |
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Kexin |
MOSFET |
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NEC |
MOS FIELD EFFECT TRANSISTOR |
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Kexin |
MOSFET |
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NEC |
MOS FIELD EFFECT TRANSISTOR |
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NEC |
P-Channel Power MOSFET |
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Kexin |
MOSFET |
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NEC |
MOS FIELD EFFECT TRANSISTOR |
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Kexin |
MOSFET |
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