2SJ534 |
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Part Number | 2SJ534 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. •... |
Features |
• Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ534 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –18 –72 –18 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –18 27 30 150 –55 to +150 EAR... |
Document |
2SJ534 Data Sheet
PDF 52.41KB |
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