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2SJ479S |
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| Part Number | 2SJ479S |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ479(L), 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switch... |
| Features |
• Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –30 –120 –30 50 150 –55 to +150 Unit V V A... |
| Document |
 2SJ479S Data Sheet
PDF 38.52KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Fuji Electric |
P-Channel MOSFET |
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Fuji Electric |
Power MOSFET |
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Fuji Electric |
P-Channel MOSFET |
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Fuji Electric |
Power MOSFET |
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Fuji Electric |
P-Channel MOSFET |
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Fuji Electric |
Power MOSFET |
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Fuji Electric |
P-Channel MOSFET |
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