Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ307] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 .
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ307]
10.0 3.2
4.5 2.8
3.5 7.2 16.0
18.1 5.6
Specifications
1.6 1.2
0.75 123 2.55 2.55
2.55 2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation
Symbol
VDSS VGSS
ID IDP PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SJ302 |
NEC |
P-Channel MOSFET | |
2 | 2SJ302-Z |
NEC |
SWITCHING P-CHANNEL POWER MOSFET | |
3 | 2SJ302-ZJ |
Kexin |
P-Channel MOSFET | |
4 | 2SJ303 |
NEC |
P-Channel MOSFET | |
5 | 2SJ304 |
Toshiba Semiconductor |
P-Channel MOSFET | |
6 | 2SJ305 |
Toshiba Semiconductor |
P-Channel MOSFET | |
7 | 2SJ3053DV |
Kexin |
P-Channel MOSFET | |
8 | 2SJ306 |
Sanyo Semicon Device |
P-Channel MOSFET | |
9 | 2SJ308 |
Sanyo Semicon Device |
P-Channel MOSFET | |
10 | 2SJ312 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ313 |
Toshiba Semiconductor |
P-Channel MOSFET | |
12 | 2SJ315 |
Toshiba Semiconductor |
P-Channel MOSFET | |
13 | 2SJ316 |
Sanyo Semicon Device |
P-Channel MOSFET | |
14 | 2SJ317 |
Hitachi Semiconductor |
P-Channel MOSFET | |
15 | 2SJ319 |
Hitachi Semiconductor |
P-Channel MOSFET |