2SH20 |
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| Part Number | 2SH20 |
| Manufacturer | Hitachi Semiconductor |
| Description | ADE–208–293 (Z) 2SH20 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate ... |
| Features |
• High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 36 60 100 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ————————————————... |
| Document |
 2SH20 Data Sheet
PDF 43.72KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel IGBT |
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Hitachi Semiconductor |
Silicon N-Channel IGBT |
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