2SD756A Silicon NPN Transistor

2SD756A Silicon NPN Transistor

2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage.

Features

— V V Unit Test conditions V V µA IC = 1 mA, RBE = ∞ IC = 10 µA, IE = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ — — — — — — — 350 1.6 — 250 125 — — — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE 1200 250 — 0.75 0.2 — — 125 — — — — VCE(sat) Gain bandwidth product fT Collector output capacitance Cob MHz VCE = 12 V, IC = 5 mA pF VCB = 25 V, IE = 0, f = 1 MHz Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. D E 400 to 800 400 to 800.