2SD655 Silicon NPN Transistor

2SD655 Silicon NPN Transistor

2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak .

Features

ter voltage Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) hFE*1 fT Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 2 2SD655 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 Collector Current IC (mA) 40 50 0.04 0.035 0.03 0.025 400 30 0.02 20 0.015 0.01 200 10 0.005 mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteris.