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Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.9±0.1 2.5±0.1 1.0 Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual .
1.5
1.5 R0.9 R0.9
0.4
1.0±0.1
R
0. 7
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol
0.85
0.55±0.1
3
2
emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V
2.5 2.5
V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC
–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD638 2SD639 2SD638 2SD639
(Ta.
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