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Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 (Ta=25˚C) Ratings 60 50 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2..
q q q
1.5 R0.9 R0.9
0.85
(Ta=25˚C)
Ratings 60 50 7 200 100 400 150
–55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
EIAJ:SC
–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Co.
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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INCHANGE |
NPN Transistor |
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Toshiba Semiconductor |
NPN TRIPLE DIFFUSED TRANSISTOR |
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SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
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|
INCHANGE |
NPN Transistor |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
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Toshiba |
NPN Transistor |
|
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|
|
INCHANGE |
NPN Transistor |
|
|
|
|
SavantIC |
(2SD633 / 2SD635) SILICON POWER TRANSISTOR |
|
|
|
|
INCHANGE |
NPN Transistor |
|
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Panasonic |
(2SD636 / 2SD637) NPN Transistor |
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Panasonic |
(2SD636 / 2SD637) NPN Transistor |
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Panasonic Semiconductor |
Silicon NPN Transistor |
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Panasonic Semiconductor |
Silicon PNP Transistor |
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Panasonic Semiconductor |
Silicon NPN Transistor |
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|
Panasonic Semiconductor |
Silicon PNP Transistor |
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