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CXG1006N Datasheet

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CXG1006N GSM900/1800/1900 SPDT TX/RX Switch

The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation • Low insertion loss 0.5dB (Typ.) at 2.0GHz • High isolation 27dB (Typ.) at 2.0GHz • High power s.

Features


• Single positive power supply operation
• Low insertion loss 0.5dB (Typ.) at 2.0GHz
• High isolation 27dB (Typ.) at 2.0GHz
• High power switching P1dB (Typ.) 32dBm at 2.0GHz VCTL (H) = 2.0V 34dBm at 2.0GHz VCTL (H) = 4.0V Application Antenna switch for digital cellular telephones Structure GaAs J-FET MMIC 8 pin SSOP (Plastic) Absolute Maximum Ratings (Ta = 25°C)
• Control voltage Vctl 7
• Operating temperature Topr
  –35 to +85
• Storage temperature Tstg
  –65 to +150 Operating Condition Control voltage V °C °C 0/4 V Sony reserves the right to change products and specifications without prior.

CXG1006N CXG1006N CXG1006N

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