D1212UK METAL GATE RF SILICON FET

D1212UK METAL GATE RF SILICON FET

TetraFET D1212UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (t yp ) 2 3 1 E AD 5 4 I F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 12.5V – 175MHz PUSH–PULL PIN 1 PIN 3 PIN 5 NM H DH SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 290W BVDSS Drain
  – Source Breakdown Voltage * 40V BVGSS Gate
  – Source Breakdown Voltage * ±20V ID(sat) Drain Current* 30A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter l.