D1019 METAL GATE RF SILICON FET

D1019 METAL GATE RF SILICON FET

TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 3 A GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS D G H • LOW Crss • SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 D.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS D G H
• LOW Crss
• SIMPLE BIAS CIRCUITS E F PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE
• LOW NOISE
• HIGH GAIN
  – 16 dB MINIMUM DIM A B C D E F G H mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67 Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.55 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Dr.