D1009UK |
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| Part Number | D1009UK |
| Manufacturer | Seme LAB |
| Description | TetraFET D1009UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O DR SOURCE (COMMON) DRAIN 2 GAT... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 389W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 20A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter ... |
| Document |
 D1009UK Data Sheet
PDF 95.92KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Renesas |
2SD1000 |
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Renesas |
2SD1001 |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
Product Specification |
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PDI |
GaAs Power Doubler |
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