D1006UK |
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| Part Number | D1006UK |
| Manufacturer | Seme LAB |
| Description | TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 2 3 E FG 6 5 4 J D H K QN PIN 1 PIN 3 PIN 5 SOURCE SOURCE GATE DIM mm A 9.09 B 19.3 C 45° D ... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 14 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 220W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 30A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab... |
| Datasheet |
 D1006UK Data Sheet
PDF 72.37KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Renesas |
2SD1006 |
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Renesas |
2SD1000 |
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Renesas |
2SD1001 |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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Seme LAB |
METAL GATE RF SILICON FET |
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PDI |
GaAs Power Doubler |
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PDI |
GaAs Power Doubler |
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PDI |
Product Specification |
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