DAN222 SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

DAN222 SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DAN222/D Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is des.

Features

(TA = 25°C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 µS 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 µA VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min — — 80 — — Max 0.1 1.2 — 3.5 4.0 Unit µAdc Vdc Vdc pF ns Thermal Clad is a trademark of the Bergquist Company REV 1 Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 DAN222 TYPICAL ELECTRICAL CHARACTERISTICS 100 IF, F.