MIE-514L3 GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

MIE-514L3 GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

The MIE-514L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package . 7.62 (.300) MIE-514L3 Package Dimensions φ5.05 (.200) Unite: mm ( inches ) 5.47 (.215) 5.90 (.230) Features l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high.

Features

l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 16° 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0.50 TYP. (.020) 23.40 MIN (.920) l l l l A C NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300.