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AM82731-050 |
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| Part Number | AM82731-050 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. The device is capable of operation over a wde range o... |
| Features |
is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
167 8 46 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.2 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/4
AM82731-050
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Valu e S... |
| Document |
 AM82731-050 Data Sheet
PDF 61.06KB |
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