AM82731-012 Datasheet

AM82731-012 RF & MICROWAVE TRANSISTORS

The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operaion over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a + 1 dB inp.

Features

intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 50 2.0 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM82731-012 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol.