AM81719-040 RF & MICROWAVE TRANSISTORS

AM81719-040 RF & MICROWAVE TRANSISTORS

The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term .

Features

RTH(j-c) Junction-Case Thermal Resistance* 2.2 °C/W *Applies only to rated RF amplifier operation July 6, 1995 1/3 AM81719-040 ELECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVEBO BVCES ICBO hFE IC = 50 mA IE = 4 mA IC = 80 mA VCB = 28 V VCE = 30 V IE = 0 mA IC = 0 mA 42 3.5 45 — — — — — — — — — 8 300 V V V mA — IC = 2.5 A 30 DYNAMIC Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it POUT ηc GP f = 1750 − 1850 MHz f = 1750 − 1850 MHz f = 1750 − 1850 MHz PIN = 8.0 W PIN = 8.0 W PIN = 8.0 W VCC = 28 V VCC = 28 V.