AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM

AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM

Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation • Low Power Dissipation – 80 mA Active Current – .

Features

• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
  – Internal Address and Data Latches for 128-Bytes
  – Internal Control Timer
• Fast Write Cycle Time
  – Page Write Cycle Time - 10 ms Maximum
  – 1 to 128-Byte Page Write Operation
• Low Power Dissipation
  – 80 mA Active Current
  – 300µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
  – Endurance: 104 or 105 Cycles
  – Data Retention: 10 Years
• Single 5V  10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout A.