BAT64-04 Datasheet

BAT64-04 Silicon Schottky Diodes

BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT 64-04 BAT64-05 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handl.

Features

40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C Forward voltage VF mV V IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA AC Characteristics Diode capacitance CT 4 6 pF VR = 1 V, f = 1 MHz Forward Current IF = f(VF) Reverse current IR = f (VR) TA = Parameter Semiconductor Group 2 Jan-31-1997 BAT 64 Diode capacitance CT = f (V.