Document | DataSheet (80.92KB) |
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAT54SWT1/D Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature.
HARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non
–Repetitive Peak Forward Current (t < 1.0 s)
Preferred devices are Motorola recommended choices for future use and best overal.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | BAT54SWT |
HY |
Schottky Barrier Diode | |
2 | BAT54SWT |
MCC |
Schottky Barrier Diode | |
3 | BAT54SWT1 |
ON Semiconductor |
DUAL SERIES SCHOTTKY BARRIER DIODES | |
4 | BAT54SWT1G |
Fairchild Semiconductor |
Schottky Diodes | |
5 | BAT54SWT1G |
ON Semiconductor |
Dual Series Schottky Barrier Diodes | |
6 | BAT54SW |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE | |
7 | BAT54SW |
IRF |
SCHOTTKY RECTIFIER | |
8 | BAT54SW |
DIODES |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
9 | BAT54SW |
NXP |
Schottky barrier diodes | |
10 | BAT54SW |
UTC |
SCHOTTKY BARRIER (DUAL) DIODES | |
11 | BAT54SW |
Taiwan Semiconductor |
200mW Surface Mount Schottky Barrier Diode | |
12 | BAT54SW |
nexperia |
Schottky barrier diode | |
13 | BAT54SWQ |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
14 | BAT54S |
Fairchild Semiconductor |
Schottky Diodes | |
15 | BAT54S |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE |