Silicon Schottky Diodes q q q BAT 14- … 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to 40 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-014 BAT 14-034 BAT 14-044 BAT 14-064 BAT 14-074 BAT .
erwise specified. Parameter Symbol min. Breakdown voltage IR = 10 µA V(BR) Forward voltage VF BAT 14-014/-034 IF = 1 mA BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/-114 BAT 14-124 BAT 14-014/-034 IF = 10 mA BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/-114 BAT 14-124 Diode capacitance f = 1 M Hz, VR = 0 CT BAT 14-014/-034 BAT 14-044/-064 BAT 14-074/-094 BAT 14-104/-114 BAT 14-124 CC
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– 0.25 0.2 0.17 0.13 0.1 0.1 0.35 0.25 0.2 0.15 0.12
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– Values typ.
– 0.42 0.43 0.44 0.46 0.47 0.5 0.53 0.55 0.58 0.63 max.
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– pF V Unit
Case capacitance
Noise fi.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | BAT14-013 |
Siemens Semiconductor Group |
HiRel Silicon Schottky Diode | |
2 | BAT14-014 |
Siemens Semiconductor Group |
HiRel Silicon Schottky Diode | |
3 | BAT14-020D |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
4 | BAT14-020S |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
5 | BAT14-03 |
Siemens Semiconductor Group |
Silicon Schottky Diode |