BAT14... Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type BAT14-03W 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white Maximum Ratings at .
1 MHz Differential forward resistance IF = 10mA / 50mA RF 5.5 CT 0.22 0.35 pF Symbol min. V(BR) VF 0.36 0.48 4 Values typ. max. - Unit V 0.43 0.55 0.52 0.66 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) f = 1MHz 0.5 pF Reverse current IR = (VR) TA = Parameter 10 1 µA 0.4 10 0.35 TA =125°C 0 CT 0.3 0.25 0.2 0.15 0.1 0.05 0 0 V IR TA =85°C 10 -1 TA =25°C 10 -2 0.5 1 1.5 2 2.5 3 3.5 4 5 10 -3 1 1.5 2 2.5 3 3.5 4 4.5 V 5.5 VF VR Forward current IF = (V F) 10 mA 2 10 1 IF 10 0 -40°C 25°C 85°C 125°C 10 -1 10 -2 0 0.1 0.2 0.3 0.4 0.5 0..
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No. | Part # | Manufacture | Description | Datasheet |
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Diodes Incorporated |
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
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Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
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NXP |
Schottky barrier double diodes |
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NXP |
Schottky barrier double diodes |
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NXP |
Schottky barrier double diodes |
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NXP |
Schottky barrier double diodes |
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Siemens Semiconductor Group |
HiRel Silicon Schottky Diode |
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Siemens Semiconductor Group |
HiRel Silicon Schottky Diode |
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Siemens Semiconductor Group |
Silicon Schottky Diodes |
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Siemens Semiconductor Group |
HiRel Silicon Schottky Diode |
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Siemens Semiconductor Group |
Silicon Schottky Diodes |
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Siemens Semiconductor Group |
Silicon Schottky Diodes |
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Siemens Semiconductor Group |
Silicon Schottky Diode |
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Siemens Semiconductor Group |
HiRel Silicon Schottky Diode |
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