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BAR81W |
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| Part Number | BAR81W |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BAR81... Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open tra... |
| Features |
rward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 I-region width Shunt insertion loss1) VR = 3 V, f = 1.89 GHz Shunt isolation1) IF = 10 mA , f = 1.89 GHz Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
Symbol min. IR VF -
Values typ. 0.93 max. 20 1
Unit
nA V
CT rf 0.6 0.57 0.7 80 1 0.9 1 -
pF
ns
rr
WI |S21|2 |S21|2
-
... |
| Document |
 BAR81W Data Sheet
PDF 407.48KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Siemens Semiconductor Group |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
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Infineon Technologies AG |
Silicon RF Switching Diodes |
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Siemens Semiconductor Group |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
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Siemens Semiconductor Group |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
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Infineon Technologies AG |
Silicon RF Switching Diode |
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Infineon Technologies AG |
Silicon PIN Diode |
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Infineon Technologies AG |
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Infineon Technologies AG |
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Infineon Technologies AG |
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Infineon Technologies AG |
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