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BAR81W |
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| Part Number | BAR81W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering ... |
| Features |
C characteristics Diode capacitance
CT
0.6 0.57 0.7 0.15 -
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf Ls
Ω nH
IF = 5 mA, f = 100 MHz
Series inductance
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAR 81W
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
120
mA
100 90 80
TS
IF
70 60 50 40 30 20 10 0 0 20 40 60 80 100
TA
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f... |
| Document |
 BAR81W Data Sheet
PDF 30.65KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Siemens Semiconductor Group |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
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Infineon Technologies AG |
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Siemens Semiconductor Group |
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