The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitab.
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 70/85 ns (max)
• Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature:
–40 to +85˚C
Ordering Information
Type No. HM62W8512BLTTI-7 HM62W8512BLTTI-8 Access time 70 ns 85 ns Package 400-mil 32-pin plastic TSOP II (TTP-32D)
HM62W8512BI Series
Pin Arrangement
32-pin TSOPII (Normal Typ.
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No. | Part # | Manufacture | Description | Datasheet |
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Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM |
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Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
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H&M semi |
High Input Voltage LDO Linear Regulators |
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H&M semi |
ultra sensitive hall effect switch |
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