HM624100H 4M High Speed SRAM (1-Mword x 4-bit)

HM624100H 4M High Speed SRAM (1-Mword x 4-bit)

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed a.

Features

• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 10/12/15 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current : 200/180/160 mA (max)
• TTL standby current : 70/60/50 mA (max)
• CMOS standby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current : 0.8 mA (max) (L-version)
• Data retension voltage : 2.0 V (min) (L-version)
• Center VCC and VSS type pinout HM624100H Series Ordering Information Type No. HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM62410.