HM5257165B-75 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM

HM5257165B-75 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM

The HM5257165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. The HM5257805B is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. The HM5257405B is a 512-Mbit SDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of th.

Features

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• 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable burst length: 1/2/4/8 2 variations of burst sequence  Sequential (BL = 1/2/4/8)  Interleave (BL = 1/2/4/8) Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. HM5257165B/HM5257805B/HM5257405B-75/A6
• Programmable CAS latency: 2/3
• Byte control by DQM : DQM (HM5257805B/HM5257405B) : DQMU/DQML (HM5257165B)
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