HM514400B 1/048/576-word X 4-bit Dynamic Random Access Memory

HM514400B 1/048/576-word X 4-bit Dynamic Random Access Memory

Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Ar.

Features

• Single 5 V (±10%)
• High speed — Access time 60 ns/70 ns/80 ns (max)
• Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (max) 0.55 mW (max) (L-version)
• Fast page mode capability
• 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version)
• 3 variations of refresh — RAS-only refresh — CAS-before-RAS refresh — Hidden refresh HM514400B/BL, HM514400C/CL Series Ordering Information Type No. HM514400BS-6 HM514400BS-7 HM514400BS-8 HM514400BLS-6 HM514400BLS-7 HM514400BLS-8 HM514400CS-6 HM514400CS-7 HM514400CS-8 HM514400CLS-6 HM514400CLS-7 HM514400CLS-.