SMG120N80EPD IGBT

SMG120N80EPD IGBT

Main Product Characteristics: VCES 1250V IC 80A VCE(sat) 1.75V GCE TO – 247Plus-3L Features and Benefits: ◼ Trench FS technology offering ◼ High speed switching ◼ Low gate charge and VCE(sat) ◼ High ruggedness, temperature stable behavior ◼ Maximum junction temperature 175°C Applications: ◼.

Features

◼ Trench FS technology offering
◼ High speed switching
◼ Low gate charge and VCE(sat)
◼ High ruggedness, temperature stable behavior
◼ Maximum junction temperature 175°C Applications:
◼ Solar inverters
◼ Uninterruptible power supplies
◼ Motor drives
◼ Air condition SMG120N80EPD Schematic Diagram Absolute Max Rating: Symbol VCES VGES IC ICpuls - IF IFM PD TJ TSTG TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=650V，TJ=175°C Diode Continuous Forward Cu.