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VBZR2N7000 |
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| Part Number | VBZR2N7000 |
| Manufacturer | VBsemi |
| Description | VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S 3 Top View FEATURES • Halogen-free According t... |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays... |
| Document |
 VBZR2N7000 Data Sheet
PDF 266.31KB |
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