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SCT027W65G3-4AG |
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| Part Number | SCT027W65G3-4AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature... |
| Features |
Order code SCT027W65G3-4AG
VDS 650 V
RDS(on) typ. 29 mΩ
ID 60 A
HiP247-4
2 34 1
Drain(1, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been d... |
| Document |
 SCT027W65G3-4AG Data Sheet
PDF 192.71KB |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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