NVMFS4C305N N-Channel Power MOSFET

NVMFS4C305N N-Channel Power MOSFET

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel, SO-8 FL 30 V, 127 A NVMFS4C05N, NVMFS4C305N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option .

Features

• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2 and 4) VDSS 30 V VGS ±20 V TA = 25°C TA = 80°C ID 27.2 A 21.6 Power Dissipation RqJA (No.